型号PBSS8510PA
品牌
分类通用低VCEsat双极性晶体管
描述100 V, 5.2 A NPN low V_CEsat (BISS) transistor
产品概述

PBSS8510PA

100 V, 5.2 A NPN low V_CEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS9410PA.