型号NSS12600CF8
品牌
分类通用型低VCE(sat)晶体管
描述12 V, 6.0 A, Low V
相关操作
产品概述

Low VCEsat Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.