The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (t_rr < 30ns). It has half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.Formerly developmental type TA49057.