Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET

The MLD2N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent driver or other applications where a high in-rush current or a shorted load condition could occur.

This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and technology for low on-resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.

The internal Gate-Source and Gate-Drain clamps allow the device to be applied without use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 k Gate-Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

The MLD2N06CL is fabricated using technology that combines the advantages of a power MOSFET output device with the on-chip p circuitry that can be obtained from a standard MOSFET process. These devices are specified over a wide temperature range from -50 C to 150 C.