型号NTC080N120SC1 |
品牌 |
分类碳化硅 (SiC) MOSFET |
描述Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, Bare Die |
产品概述 Silicon Carbide (SiC) MOSFET uses a completely new technologythat provide superior switching performance and higher reliabilitycompared to Silicon. In addition, the low ON resistance and compactchip size ensure low capacitance and gate charge. Consequently,system benefits include highest efficiency, faster operation frequency,increased power density, reduced EMI, and reduced system size. |