型号NTBG1000N170M1
品牌
分类碳化硅 (SiC) MOSFET
描述Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L
相关操作
产品概述

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.