型号NXH80B120MNQ0 |
品牌  |
分类碳化硅（SiC）模块 |
描述Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode |
产品概述 The NXH80B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 80mohm/1200V SiC MOSFETs and two 20A/1200V SiC diodes. Two additional 30A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included. |
