型号NXH40B120MNQ1
品牌
分类碳化硅(SiC)模块
描述Full SiC MOSFET Module | EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode
产品概述

The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.