型号1EDI20I12SV
品牌
分类栅极驱动 IC
描述
相关操作
产品概述

1200 V single high-side gate driver IC with galvanic isolation, slew-rate control, DESAT, soft over-current shutdown and two-level turn-off

EiceDRIVER™1200 V single-channel galvanic isolatedgate driverwith typical 10 A source and 2 A sink currents in a DSO-36 wide body package.

The 1EDI20I12SV (1ED-SRC) belongs to ourslew rate control gate driver family.It controls up to three external p-channel MOSFET as a controlled current source during turn-on and is therefore able to control precisely the turn-on process in order to avoid excessive dvCE/dt or diC/dt transients. The IC has a peak sinking capability of 2 A for turning off theIGBT and an external PNP transistor that can be used to support IGBT with currents ratings higher than 75 A.

特征描述

  • Single channel isolated gate driver IC (1ED-SRC)
  • Slew rate control
  • For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
  • IGBT off-state: 2 A pull down to rail
  • Overcurrent protection for sense IGBTs and conventional IGBTs
  • Precise DESAT protection, VCEsat detection
  • Soft turn-off shut down: 1 A pull down to rail
  • Active Miller Clamp, two level turn off (TLTOff)
  • Active shutdown and Short circuit clamping

优势

  • Optimized short circuit control for 3-level inverters
  • Real-time adjustable current source slew rate control during IGBT turn-on
  • Operation at high ambient temperature up to 105°C