首页 Infineon(英飞凌) 栅极驱动 IC 1ED020I12-B2
型号1ED020I12-B2 |
品牌 |
分类栅极驱动 IC |
描述 |
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产品概述 1200 V single high-side gate driver IC with UL certification, active Miller clamp, DESAT and short circuit clamping EiceDRIVER™ 1200 Vgalvanic isolated single channel gate driver in DSO-16 wide body package that provides an output current capability of typically 2 A. All logic pins are 5 V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology. The 1ED-B2 provides several protection features like IGBT desaturation protection, active Miller clamping, and active shut down. 特征描述 - Single channel isolated gate driver IC (1ED-B2)
- For 600 V/1200 V IGBTs, MOSFETs, SiC MOSFETs, discrete and modules
- 2 A rail-to-rail typical output current
- Precise DESAT protection, V(cesat) detection
- Active Miller Clamp
- Active shutdown and short circuit clamping
- 28 V absolute Max. output supply voltage
- 170/165 ns typ. propagation delay
- 12/11 V output UVLO
- ≥ 100 kV/µs CMTI
- Certified according to UL 1577 with VISO = 3750 V for 1 min
- Basic Isolation tested according VDE 0884-10 VIORM=1420 V, VIOTM=6000 V (standard expired Dec. 31, 2019, product and testing remain unchanged)
优势 - Tight propagation-delay matching: tolerance improves application robustness without variations due to aging, current, and temperature
- Precise, integrated filters reduce propagation-delay variation over a wide range of operating conditions; reduce the need of external filters
- Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
- Wide body package with 8 mm creepage distance
- Immunity against negative and positive transients, increases reliability of the end product
- Low power losses for switching frequencies into MHz range
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