型号IRS2008M |
品牌 |
分类栅极驱动 IC |
描述 |
产品概述 具备关断和VCC&VBS UVLO功能的200 V半桥栅极驱动器IC,确保可靠的启动操作 是200 V半桥栅极驱动器IC,它采用MLPQ 4 x 4 14L封装,具有关断输入、典型的0.29 A源电流和0.6 A灌电流,适用于MOSFET。您亦可订购SOIC-8封装版本:IRS2008S. The IRS2008 is a200 V level shift junction isolated MOSFETdriverwith dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.IRS2005S/M:200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S. 特征描述
优势
发现我们的型号IRS2005S/M: 200 V 高边和低边栅极驱动器 IC,具有680/150 ns传播延迟。替代 IRS2001S. IRS2007S/M: 200 V 半桥栅极驱动器 IC,具有160/150 ns传播延迟。替代 IRS2003S. IRS2008S/M: 200 V 半桥栅极驱动器 Ic,具有关断输入和160/150 ns传播延迟。替代 IRS2004S. 步进电机评估板可用:EVAL-PS-IRS200X |