型号IR2233S | ||||||||||||||||||||||||||||||
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分类栅极驱动 IC | ||||||||||||||||||||||||||||||
描述 | ||||||||||||||||||||||||||||||
产品概述 1200 V three-phase gate driver IC with integrated over current protection, fault reporting, OPAMP, and shutdown EiceDRIVER™ 1200 Vthree-phasegate driverICwith typical 0.25 A source and 0.5 A sink currents in DSO-28 lead package forIGBT DicretesandIGBT modules. IR2233S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such over-current protection, fault reporting, under voltage lockout protection, cross-conduction prevention, independent op amp, shutdown, separate logic and power ground The IR2233S three-phase gate driver is well suited for low- and medium- power designs up to 4 kW or higher power levels with additional external buffer current driver. IR2233S provides high performance drive capability with full protective features for a cost-competitive solution. IR2233S belongs to the1200 V level-shift junction isolated (JI)gate driver family. A 600 V variant is also available,IR2133S. 特征描述
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