型号IR2214SS | ||||||||||||||||||||||||||||||
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分类栅极驱动 IC | ||||||||||||||||||||||||||||||
描述 | ||||||||||||||||||||||||||||||
产品概述 1200 V half-bridge gate driver IC with integrated DESAT, Soft-Off, UVLO, TLTO, deadtime, and fault reporting EiceDRIVER™ 1200 V half-bridge gate driver ICwith typical 2 A source and 3 A sink currents in SSOP-24 lead package for IGBT discretesand IGBT modules. IR2214SS utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such as desaturation detection (DESAT), soft over-current shutdown (Soft-off), under-voltage lockout (UVLO) protection, two-level turn-on (TLTO) output, deadtime, and fault reporting. The IR2214SS half-bridge gate driver is well suited for low- and medium- power designs up to 10 kW. IR2214SS provides high performance drive capability with full protective features for a cost-competitive solution. Optimized system performance with the IR2214SS and EconoPIM™3 module is demonstrated with our evaluation boardEVAL-M1-IR2214 IR2214SS belongs to the 1200 V level-shift junction isolated (JI) gate driver family and is also available as a600 V variant:IR2114SS. 特征描述
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