EiceDRIVER™ 1200 V three-phase gate driverwith typical 0.35 A source and 0.65 A sink currents in DSO-24 lead package for IGBT(Insulated Gate Biploar Transistor) /SiC(Silicon Carbide) Module and discretes.

By utilizing our 1200 V thin-film silicon-on-insulator (SOI) technology, 6ED2231S12T provides unique, measureable advantages including three low-ohmic integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes.

6ED2231S12T is a high voltage, high speed IGBT gate driver with three independent high side and low side referenced output channels for three phase applications. 6ED2231S12T integrates protective features such as over-current protection with fast, and accurate fault reporting (+/-5%), shoot-through protection, and more tighten under-voltage lockout (UVLO) protection integrated in a DSO-24 package. The DSO-24 package (DSO-28 with 4-pins removed) provides the best trade-off between small IC package and clearance distances.

The 6ED2231S12T is well suited for low- power designs up to 6 kW or higher power levels with additional external buffer current driver. When combined with Infineon IGBT/SiC modules such as EasyPACK 1B™ or EasyPACK 2B™, designs achieve the best balance between performance, small-form factor, and cost. This is clearly demonstrated with EVAL-6ED2231S12TM1.

6ED2231S12T belongs to the 1200V Level Shift gate driver family.