首页 Infineon(英飞凌) 栅极驱动 IC 1EDI30I12MF
型号1EDI30I12MF |
品牌 |
分类栅极驱动 IC |
描述 |
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产品概述 1200 V, 6.2 A single-channel isolated gate driver with Miller clamp and short circuit clamping EiceDRIVER™ Compactsingle-channelisolated gate driverwith 5.9/6.2 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance forIGBTs,MOSFETsand SiC MOSFETs. 1EDI30I12MF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-MF family). 1EDI30I12MF offers active Miller clamp, 240 ns input filter, accurate and stable timing. 特征描述 - EiceDRIVER™ Compact single channel isolated gate driver family
- For 600 V, 650 V, 1200 V IGBTs, SiC and Si MOSFETs
- Galvanically isolated coreless transformer gate driver
- 6.2 A typical sinking and sourcing peak output current
- 20 V absolute maximum output supply voltage
- 300 ns propagation delay with 240 ns input filter
- High common-mode transient immunity CMTI >100 kV/μs
- Active Miller clamp
- Short-circuit clamping and active shutdown
- DSO-8 150 mil narrow-body package with 4 mm creepage distance
- 10.5 V/12.7 V undervoltage lockout (UVLO) protection with hysteresis
优势 - Active Miller clamp to prevent parasitic turn on, ideal for driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7
- Integrated filters reduce the need of external filters
- Wide input voltage operating range
- Suitable for operation at high ambient temperature and in fast switching applications
- No need to adapt signal voltage levels between μController and driver
- Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
- Short-circuit clamping to limit the gate voltage during short circuit
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