型号1EDI20N12AF
品牌
分类栅极驱动 IC
描述
相关操作
产品概述

1200 V, 4 A single-channel gate driver with separate output and short circuit clamping

EiceDRIVER™ Compact1200 Vsingle-channelisolated gate driverwith 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance forMOSFETs.

1EDI20N12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20IN12AF offers separate sink and source output, 40 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

特征描述

  • EiceDRIVER™ Compact single channel isolated gate driver family
  • For 600 V, 650 V, 950 V MOSFETs
  • Galvanically isolated coreless transformer gate driver
  • 4 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • 120 ns propagation delay with 40 ns input filter
  • High common-mode transient immunity CMTI >100 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package with 4 mm creepage distance
  • 8 V/10 V undervoltage lockout (UVLO) protection with hysteresis

优势

  • Tailored for all 650 V CoolMOS™ C7, P6 and other super junction MOS transistors
  • High switching frequency applications as SMPS, up to 4 MHz
  • Integrated filters reduce the need of external filters
  • Suitable for operation at high ambient temperature and in fast switching applications
  • No need to adapt signal voltage levels between μController and driver
  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
  • Short-circuit clamping to limit the gate voltage during short circuit