型号1EDI20I12AF
品牌
分类栅极驱动 IC
描述
相关操作
产品概述

1200 V, 4 A single-channel isolated gate driver with separate output and short circuit clamping

EiceDRIVER™ Compactsingle-channelisolated gate driverwith 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance forIGBTs,MOSFETsandSiC MOSFETs.

1EDI20I12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20I12AF offers separate sink and source output, 240 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

特征描述

  • EiceDRIVER™ Compact single channel isolated gate driver family
  • For 600 V, 650 V, 1200 V IGBTs, SiC and Si MOSFETs
  • Galvanically isolated coreless transformer gate driver
  • 4 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • 300 ns propagation delay with 240 ns input filter
  • High common-mode transient immunity CMTI >100 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package with 4 mm creepage distance
  • 10.5 V/12.7 V undervoltage lockout (UVLO) protection with hysteresis

优势

  • Integrated filters reduce the need of external filters
  • Suitable for operation at high ambient temperature and in fast switching applications
  • No need to adapt signal voltage levels between μController and driver
  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
  • Short-circuit clamping to limit the gate voltage during short circuit