型号2ED1322S12M
品牌
分类栅极驱动 IC
描述
相关操作
产品概述

EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16(300mils) package for 1200 V SiC MOSFET and IGBT power devices. The2ED1322S12M is based on ourSOI-technologywhich hasan excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasiticlatch upacross the operating temperature and voltage range.

特征描述

  • Floating channel designed for bootstrap operation
  • Maximum bootstrap voltage (VB node) of + 1225 V
  • Operating voltages (VS node) upto + 1200 V
  • Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses
  • 2.3 A / 4.6 A peak output source / sink current capability
  • Integrated ultra-fast over-current protection (OCP)
  • ± 5% high accuracy reference threshold
  • Less than 1 us over-current sens to output shutdown
  • Integrated ultra-fast, low resistance bootstrap diode
  • Integrated dead-time and shoot-through prevention logic
  • Enable, Fault, and programmable Fault clear RFE input
  • Logic operational up to –8 V on VS Pin
  • Independent per channel undervoltage lockout (UVLO)
  • 25 V VCC supply voltage (maximum)
  • Separate Logic (VSS) and output ground (COM)
  • Greater than 5 mm clearance / creepage
  • 2 kV HBM ESD capability

优势

  • 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design
  • Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch
  • 100 V negative VS increased reliability / robustness
  • 50% lower level shift losses leads lower temperature operation and higher reliability
  • Latch-up immune increased reliability
  • Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
  • Under-voltage lockout provides protection at low supply voltage