型号IGLR60R190D1
品牌
分类GaN HEMT – 氮化镓晶体管
描述
产品概述

Infineon’s CoolGaN™ 600 V GIT HEMTs family of GaN enhancement mode power transistor offers fast turn-on and turn-off speed, at minimum switching losses.

The CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards, making it the perfect choice for highest application reliability.

With the IGLR60R190D1 GaN power transistor, Infineon offers the CoolGaN™ GIT HEMTs in a small form factor SMD package, ideal for applications that require a compact device without a heatsink.

The ThinPAK 5x6 package is the recommended leadless SMD package for low power SMPS applications. It’s small footprint of 5x6mm² and low profile with only 1mm height makes it perfect for achieving highest power density.

The significantly smaller package size in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in your designs.

特征描述

  • GaN HEMT in small form factor leadless SMD package
  • CoolGaN™ 600V series , GaN-tailored qualification

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

  • Low power SMPS
  • Charger / adaptors
  • SMPS forIndustrial, telecom, datacenter based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).