型号IGT60R190D1
品牌
分类GaN HEMT – 氮化镓晶体管
描述
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产品概述

Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R190D1 for ultimate efficiency and reliability

IGT60R190D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses, and enables simple half-bridge topologies with the highest efficiency.

The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom andserver SMPS,telecomas well asadapter,charger,wireless chargingand numerous other applications that demand the highest efficiency or power density.

特征描述

  • Enhancement mode transistor – normally OFF switch
  • Ultra-fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

  • Industrial
  • Telecom
  • DatacenterSMPSbased on the half-bridge topology