型号IGLD60R190D1S |
品牌 |
分类GaN HEMT – 氮化镓晶体管 |
描述 |
产品概述 CoolGaN™ 600 V enhancement mode power transistor with fast turn-on and turn-off speed and minimum switching losses This family of GaN HEMT comes in a small form factor SMD package suitable for applications that require a compact device without a heatsink. The gallium nitride CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. The PG-LSON-8 package is a leadless SMD package specially designed for Consumer SMPS and high-density chargersthat demand the highest efficiency and power density. This low-profile package comes with a small footprint of 8x8mm². The package size with enhanced thermal resistance in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power-density-driven designs. 特征描述
优势
潜在应用
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