型号IGLD60R190D1S
品牌
分类GaN HEMT – 氮化镓晶体管
描述
产品概述

CoolGaN™ 600 V enhancement mode power transistor with fast turn-on and turn-off speed and minimum switching losses

This family of GaN HEMT comes in a small form factor SMD package suitable for applications that require a compact device without a heatsink. The gallium nitride CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. The PG-LSON-8 package is a leadless SMD package specially designed for Consumer SMPS and high-density chargersthat demand the highest efficiency and power density.

This low-profile package comes with a small footprint of 8x8mm². The package size with enhanced thermal resistance in combination with its benchmark low parasitics inductances can be used as a new and effective way to decrease system solution size in power-density-driven designs.

特征描述

  • Small form factor GaN HEMT with enhanced thermal resistance suitable for optimal system solution size in power-density driven designs
  • CoolGaN™ 600V series, GaN-tailored qualification

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

  • Low power SMPS
  • Charger/adapters
  • Consumer SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).