型号IGO60R042D1
品牌
分类GaN HEMT – 氮化镓晶体管
描述
相关操作
产品概述

600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package

The IGO60R042D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses, and enables simple half-bridge topologies with the highest efficiency.

This family of GaN HEMT comes in an optimal power dissipation SMD package suitable for applications that require a compact device with or without a heatsink.

The gallium nitride CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards.

The DSO-20-85 package is a leaded SMD package specially designed for high-power SMPS that requires bottom side cooled package. It addresses datacom and server SMPS, telecom as well as renewables, and numerous other applications that demand the highest efficiency or power density.

特征描述

  • Optimal power dissipation top and bottom side cooling GaN HEMT suitable for optimal system solution size in power-density driven designs
  • CoolGaN™ 600 V series, GaN-tailored qualification

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

  • Industrial
  • Telecom
  • Datacenter SMPS based on the half-bridge topology