型号IGOT60R042D1
品牌
分类GaN HEMT – 氮化镓晶体管
描述
相关操作
产品概述

600 V CoolGaN™ e-mode power transistor for high power applications in top side cooled power package

The IGOT60R042D1 CoolGaN™ 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses, and enables simple half-bridge topologies with the highest efficiency.

This family of GaN HEMT comes in an optimal power dissipation SMD package suitable for applications that require a compact device with or without a heatsink.

The gallium nitride CoolGaN™ 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards.

The DSO-20-87 package is a leaded SMD package specially designed for high-power SMPS that requires a top-side cooled package. It addresses datacom and server SMPS, telecom as well as renewables, and numerous other applications that demand the highest efficiency or power density.

特征描述

  • Optimal power dissipation top and bottom side cooling GaN HEMT suitable for optimal system solution size in power-density driven designs
  • CoolGaN™ 600 V series, GaN-tailored qualification

优势

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

潜在应用

  • Industrial
  • Telecom
  • Datacenter SMPS based on the half-bridge topology