型号FZ1800R45HL4
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

IHV-B 4500 V, 1800 A 190 mm single switchIGBT Modulewith Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications.

The FZ1800R45HL4_S7can be driven with VGE=25 V instead of the usual 15 V

特征描述

  • Extremely low Static Losses
  • Highest Dynamic Robustness
  • High DC Stability
  • Low VCEsatwith positive Temperature Coefficient

优势

  • Unbeatable Robustness
  • First Module to enable >3.5 GW HVDC Plants at 525 kV
  • 20% higher Power Density (compared to the Competition Flagship)
  • Standardized Housing eases Design and Maintenance