型号FZ1200R45HL3_S7
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

IHV-B4500 V, 1200 A 190 mm single switchIGBT Modulewith Trench/Fieldstop IGBT3, Emitter Controlled3 diode and isolated AlSiC Base Plate - The best solution for your HVDC application.

Incomparison to thestandard typethe _S7 type can be driven with VGE=25 V instead of the usual 15 V

特征描述

  • Lowest static losses
  • Highest dynamic robustness
  • High short circuit capability, self-limiting short circuit current
  • Low VCEsatwith positive temperature coefficient
  • Gate emitter voltage of 25 V

优势

  • Unbeatable robustness
  • 5 -10% lower energy loss penalties possible (compared to the next best alternative)
  • Standardized housing eases design and maintenance