型号FZ825R33HE4D
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

IHV-B 3300 V, 3300 V, 825 A 130 mm single switchIGBT Modulewith TRENCHSTOP™IGBT4 and Emitter Controlled 4 diode.The experienced solution for traction and industry applications.

特征描述

  • High DC stability
  • Best in class short circuit capability
  • Low switching losses
  • Tvj op= 150°C
  • VCEsatwith positive temperature coefficient
  • AlSiC base plate for increased thermal cycling capability
  • Package with CTI > 600
  • Isolated base plate
  • Diode Power 30% higher than IGBT

优势

  • Unbeatable robustness
  • Standardized housing
  • 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
  • Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
  • Bigger Diode enables e.g. increased braking Power at traction applications