首页 Infineon(英飞凌) IGBT - 绝缘栅双极晶体管 FZ1600R33HE4
型号FZ1600R33HE4 |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
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产品概述 IHV-B 3300 V, 1600 A 130 mm single switchIGBT Modulewith TRENCHSTOP™IGBT4 and Emitter Controlled 4 diode.The experienced solution for traction and industry applications. 特征描述 - High DC stability
- Best in class short circuit capability
- Best in class current density
- Low switching losses
- Tvj op= 150°C
- VCEsatwith positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- Isolated base plate
优势 - Unbeatable robustness
- 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
- Enables most compact 1.1 MW liquid cooled inverter, on being 30% smaller than all other devices with similar performance
- 40% higher performance than next best alternative in similar size, enables inverter frame size jump
- Standardized IHV 130 x 140mm housing enables 1:1 replacement to any IHV 130 & 190x140 mm
- Easy replacement of FZ1500R33HE3 and any competition 1500 to 1800 A 3.3 kV devices possible on high performance and housing compatibility
- Rectangular RBSOA with commutated currents up to 3200 A
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