型号IKQ75N120CH3
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

1200 V, 75 A IGBT with anti-parallel diode in TO-247 package

Hard-switching 1200 V, 75 Ahighspeed IGBT3in a TO-247 package co-packed with a soft and fast recovery full current anti-parallel emitter controlled diode.

特征描述

  • High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
  • 20% lower Rth(jh)compared to TO-247 3 pin
  • Extended collector-emitter pin creepage of 4.25 mm
  • Extended clip creepage due to fully encapsulated front side of the package

优势

  • Higher system power density –Icincrease keeping the same systemthermal performance
  • Lower thermal resistanceRth(jh)andimproved by ~15% heat dissipationcapability of TO-247PLUS vs TO-247
  • Higher reliability, extended lifetimeof the device