型号IKQ75N120CT2
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

1200 V, 75 A IGBT discrete with anti-parallel diode in TO-247PLUS package

Hard switching 1200 V,75 A TRENCHSTOP™ IGBT 2 with soft, fast recovery full current rated anti-parallel emitter controlled diode in TO-247PLUS package for higher current capability, improved thermal behaviour.

The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but dueto the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.

特征描述

  • High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
  • 20% lower Rth(jh)compared to TO-247 3 pin
  • Extended collector-emitter pin creepage of 4.25 mm
  • Extended clip creepage due to fully encapsulated front side of the package

优势

  • Higher system power density –Icincrease keeping the same systemthermal performance
  • Lower thermal resistanceRth(jh)andimproved by ~15% heat dissipationcapability of TO-247PLUS vs TO-247
  • Higher reliability, extended lifetimeof the device