型号IHW25N120E1
品牌
分类IGBT - 绝缘栅双极晶体管
描述
产品概述

1200 V, 25 A IGBT采用反并联二极管,TO-247 封装

TheReverse Conducting E1 1200 V, 25 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. Low switching and conducting losses, similar toourRC-H3 family. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineon’s proven quality in Reverse Conducting IGBTs and meets all the needs of soft switching applications, including attractive pricing compared to other general purpose IGBTs.

特征描述

  • 低 E off 和VCE(sat)
  • 专为开关应用而设计
  • 性能经过优化,开关频率为18kHz-40kHz
  • 最常用的阻断电压,1200V

优势

  • 性价比出众,打造有成本效益的设计
  • 低损耗有助于设计达到能效标准
  • 直接替换现有设计
  • 软开关,可实现良好的EMI行为