首页 Infineon(英飞凌) IGBT - 绝缘栅双极晶体管 IKQ100N60T
型号IKQ100N60T |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
|
产品概述 600 V, 100 A IGBT discrete with anti-parallel diode in TO-247PLUS package Hard-switching 600 V, 100 A TRENCHSTOP™ IGBT technology in a TO-247PLUS package. This package has the same outer dimensions as the industry standard TO-247, but dueto the absence of the screw hole, allows up to 120 A in 600 V. Also the total backside activethermal pad area has been increased to improve heat dissipation capabilities of the package. 特征描述 - Highest current rating co-pack600 V in 100 A and 120 A
- 35 % bigger active thermal pad areafor up to 20% lower thermalresistanceRth(jh)
- Extended creepage distance of4.25 mm – 2 mm bigger than TO-247
优势 - Higher system power density –Icincrease keeping the same systemthermal performance
- Lower thermal resistanceRth(jh)andimproved by ~15% heat dissipationcapability of TO-247PLUS vs TO-247
- Higher reliability, extended lifetimeof the device
|