型号IKD08N65ET6
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

650 V, 8 A IGBT with anti-parallel diode in TO-252-3 package

Hard-switching 650 V,8 A TRENCHSTOP™ IGBT6 discrete in TO-252-3package. This price optimized range has premium controllability for a best cost efficient solution.

特征描述

  • Very low VCEsat
  • Maximum junction temperature 175 °C
  • Short circuit withstand time 3 µ at 400 V Vcc , TC= 150 ℃
  • Low gate charge QG
  • Pb-free lead plating; RoHS compliant

Trench and field-stop technology for 650 V applications offers :

  • very tight parameter distribution
  • high ruggedness, temperaturestable behavior
  • low VCEsatand positive temperature coefficient