首页 Infineon(英飞凌) IGBT - 绝缘栅双极晶体管 IKQ120N60T
型号IKQ120N60T |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
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产品概述 600 V, 120 A IGBT discrete with anti-parallel diode in TO-247PLUS package Hard switching 600 V,120 A TRENCHSTOP™ IGBT technology in a TO-247PLUS package for higher current capability. The TO-247PLUS package allows up to 120 A in 600 V with the same outer dimensions as the industry standard TO-247.Also the total backside activethermal pad area has been increased to improve heat dissipation capabilities of the package. 特征描述 - Highest current rating co-pack600 V in 100 A and 120 A
- 35% bigger active thermal pad areafor up to 20% lower thermalresistanceRth(jh)
- Extended creepage distance of4.25 mm – 2 mm bigger than TO-247
优势 - Higher system power density –Icincrease keeping the same systemthermal performance
- Lower thermal resistanceRth(jh)andimproved by ~15% heat dissipationcapability of TO-247PLUS vs TO-247
- Higher reliability, extended lifetimeof the device
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