型号IGD06N65T6
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

650 V, 6 A IGBT in TO-252-3 package

Hard-switching 650 V, 6 A TRENCHSTOP™ IGBT discrete in TO-252-3 packagefor a best cost efficient solution.

特征描述

  • Very low VCEsat
  • Maximum junction temperature 175°C
  • Short circuit withstand time 3µs
  • Low gate charge QG
  • Pb-free lead plating; RoHS compliant

Trench and field-stop technology for 650V applications offers :

  • very tight parameter distribution
  • high ruggedness, temperaturestable behavior
  • low VCEsat and positive temperature coefficient