型号IGP06N60T
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

600 V, 6 A IGBT Discrete in TO220 package

Hard-switching 600 V,6 Asingle TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特征描述

  • Lowest VCEsatdrop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

优势

  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability