型号IHW30N110R5
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R51100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to bestproduct performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.

特征描述

  • Powerful monolithic body diode with low forward voltage designed for soft commutation only
  • Very tight parameter distribution
  • High ruggedness, temperature stable behavior
  • Very low VCEsat
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Low EMI
  • Vg = 25 V
  • Maximum operating TJ of 175 °C
  • Pb-free lead plating; RoHS compliant

优势

  • Lowest power dissipation
  • Better thermal management for higher reliability
  • Optimized for switching frequency up to 60 kHz
  • Highest reliability against capacitive peak currents
  • Lower EMI filtering requirements