首页 Infineon(英飞凌) IGBT - 绝缘栅双极晶体管 IKFW50N65EH5
型号IKFW50N65EH5 |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
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产品概述 650 V, 50 A IGBT with anti-parallel diode in TO-247 package Hard-switching 650 V, 50 A TRENCHSTOP™ 5 H5IGBT discrete in TO-247 advanced isolation package is the highest efficiency discrete IGBT technology on the market ideally suitedfor customers who are looking for outstanding efficiency and power density. This packageeliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink. 特征描述 - Best in class 650V IGBT technology, medium speed (S5) and ultra fast speed switching (H5)
- Guaranteed 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min. 100% tested. Fully isolated package
- Lowest Rth(j-h) for higher power density
- No need to use isolation foils/TIM for reliable fast assembly (up to 35% shorter assembly time)
- Low coupling capacitance (38 pF)
优势 - No need to use isolation material and thermal grease
- 35% reduction in assembling time compared to standard TO-247 with Iso-foils
- Increased yield eliminating misalignments of isolation foils
- Up to 10°C lower Tc compared to standard TO-247 with isolation material
- Up to 20% Iout increase for higher power output
- Complete manufacturing process control
- Easy paralleling
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