首页 Infineon(英飞凌) IGBT - 绝缘栅双极晶体管 IKFW75N65EH5
型号IKFW75N65EH5 |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
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产品概述 650 V, 75 A IGBT in TO-247 advanced isolation package Hard-switching 650 V,75 ATRENCHSTOP™ 5 H5IGBT discrete in TO-247advanced isolationpackage is the highest efficiency discrete IGBT technology on the market ideally suitedfor customers who are looking for outstanding efficiency and power density. This packageeliminates the need of isolation material and enables high power density, the best thermal performance and the lowest cooling effort thanks to an effective and reliable thermal path from the IGBT die to the heatsink. 特征描述 - 650 V breakthrough voltage
- 4 times Ic pulse current (100°C Tc)
- Lowest switching losses
- Temperature stability of Vf
- 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
- 100 % tested isolated mounting surface
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
优势 - No need to use isolation material and thermal grease
- 35% reduction in assembling time compared to standard TO-247 with Iso-foils
- Increased yield eliminating misalignments of isolation foils
- Up to 10°C lower Tc compared to standard TO-247 with isolation material
- Up to 20% Iout increase for higher power output
- Complete manufacturing process control
- Easy paralleling
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