型号IKW75N65SS5
品牌
分类IGBT - 绝缘栅双极晶体管
描述
相关操作
产品概述

650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode

650 V, 75 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package.

The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.

Combination of theTRENCHSTOP™ 5 S5IGBT technology with thefreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values.

特征描述

  • Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 IGBT and CoolSiC™ diode technology
  • Very low on-state losses
  • Benchmark switching efficiency in hard switching topologies
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

优势

  • Highest efficiency
  • Reduced cooling effort
  • Increased power density
  • Plug & play replacement of the pure silicon devices
  • Easy upgrade of existing designs for higher efficiency
  • Excellent for paralleling