型号IKZA75N65SS5 |
品牌 |
分类IGBT - 绝缘栅双极晶体管 |
描述 |
产品概述 650 V, 75 A IGBT Discrete with Silicon Carbide Schottky diode 650 V, 75A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in Kelvin-emitter TO-247-4 package. The 650 V hard-switchingTRENCHSTOP™ 5 S5IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of the TRENCHSTOP™ 5 S5IGBT technology with the freewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discretefurther reduces switching losses at almost unchanged dv/dt and di/dt values. The Kelvin emitter TO-247 4pin package provides ultra-low inductance to the gate-emitter control loop further improving switching performance especially at high switching frequencies. 特征描述
优势
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