型号IPDQ60R017S7
品牌
分类Power MOSFET
描述
相关操作
产品概述

Infineon’s lowest RDS(on) *A 600 V SJ MOSFET in the novel top-side- cooled QDPAK package, ideal for low-frequency switching applications and solid-state solutions

The600 V CoolMOS™ S7 SJ MOSFET familyis optimized for low conduction losses and features the lowest RDS(on)in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on)x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies.

特征描述

  • Lowest RDS(on)
  • Compact top-side-cooled QDPAK package
  • Optimized for conduction performance
  • Improved thermal resistance
  • High pulse current capability
  • Kelvin-source pin improves switching performance at high current

优势

  • Minimizes conduction losses
  • Increases energy efficiency
  • More compact and easier designs
  • Eliminates or reduces heat sinks in solid-state design
  • Lower TCO cost or BOM cost

潜在应用

  • SMPS
  • SSRand Solid state circuit breakers
  • PLC
  • Solar energy systems
  • Battery and equipment protection
  • Indoor commercial lighting control
  • UPS
  • LSEV