型号IMBG65R057M1H
品牌
分类Power MOSFET
描述
相关操作
产品概述

SMD紧凑型封装SiC MOSFET

CoolSiC™ MOSFET 技术通过最大限度发挥碳化硅强大的物理特性，从而增强了器件性能、稳健性和易用性等独特优势。IMBG65R057M1HCoolSiC™ MOSFET 650 VSiC MOSFET 采用紧凑型 7 引脚 SMD 封装，基于先进的英飞凌碳化硅沟槽技术，适于大功率应用。 该器件旨在提高系统性能，缩减尺寸，增强可靠性。

特征描述

  • 低 Qrr 和 Qoss
  • 低开关损耗
  • 换向稳健型快速体二极管
  • 先进沟槽技术带来出色的栅极氧化物可靠性
  • 采用 .XT 互连技术，实现卓越的热性能
  • 雪崩能力更强
  • SMD 封装，可直接集成至 PCB
  • 用于优化开关性能的感测引脚

优势

  • 高性能、高可靠性且易于使用
  • 高系统效率和高功率密度
  • 降低系统成本和复杂度
  • 打造成本更低、结构更简单且尺寸更小的系统
  • 采用连续硬换向拓扑
  • 适于高温和恶劣的工作环境
  • 实现双向拓扑

潜在应用

  • 服务器
  • 电信
  • 开关电源 (SMPS)
  • 太阳能系统
  • 储能和电池系统
  • 不间断电源 (UPS)
  • 电动汽车充电
  • 电机驱动器

SiC MOSFET in compact SMD package

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R057M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.

特征描述

  • Low Qrr and Qoss
  • Low switching losses
  • Commutation robust fast body diode
  • Leading trench technology with superior gate oxide reliability
  • .XT interconnection technology for best-in-class thermal performance
  • Increased avalanche capability
  • SMD package for direct integration into PCB
  • Sense pin for optimized switching performance

优势

  • High performance, high reliability and ease of use
  • Enable high system efficiency and power density
  • Reduces system cost and complexity
  • Enable cheaper, simpler and smaller systems
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies

潜在应用

  • Server
  • Telecom
  • SMPS
  • Solar energy systems
  • Energy storage andbattery formation
  • UPS
  • EV charging
  • Motor drives