型号IPL65R200CFD7
品牌
分类Power MOSFET
描述
相关操作
产品概述

650 V CoolMOS™ CFD7 超结 MOSFET 集成了快速体二极管，是谐振大功率拓扑结构的理想选择

英飞凌650 V CoolMOS™CFD7超结MOSFETIPL65R200CFD7 采用 ThinPAK 8x8 封装，尤为适合工业应用中的谐振拓扑结构，如服务器、电信、太阳能及电动汽车充电站，其效率相较于竞品有了大幅度的提高。 作为CFD2超结MOSFET系列的后续产品，该器件的栅极电荷更低，关断性能更优异且反向恢复电荷更少，因此可显著提高效率与功率密度，额外提升 50V 的击穿电压。

特征描述

  • 超快体二极管和极低 Qrr
  • 650 V 击穿电压
  • 相较于竞品，开关损耗显著降低
  • 极低的 RDS(on)温度依赖度

优势

  • 出色的硬换向稳健性
  • 高总线电压提供额外的设计安全裕度
  • 实现更高功率密度
  • 工业 SMPS 应用中的卓越轻载效率
  • 工业 SMPS 应用中的出色满载效率
  • 比市场竞品更有竞争力的价格

潜在应用

  • 电动汽车快速充电
  • 服务器电源
  • 太阳能系统解决方案
  • 电信基础设施

The 650V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies

Infineon’s650V CoolMOS™ CFD7 superjunction MOSFETIPL65R200CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such asserver,telecom,solar, andEV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to theCFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

特征描述

  • Ultrafast body diode and very low Qrr
  • 650V breakdown voltage
  • Significantly reduced switching losses compared to competition
  • Lowest RDS(on)dependency over temperature

优势

  • Excellent hard-commutation ruggedness
  • Extra safety margin for designs with increased bus voltage
  • Enabling increased power density
  • Outstanding light-load efficiency in industrial SMPS applications
  • Improved full-load efficiency in industrial SMPS applications
  • Price competitiveness compared to alternative offerings in the market

潜在应用

  • Fast EV charging
  • Server power supply
  • Solutions for solar energy systems
  • Telecom infrastructure