首页 Infineon(英飞凌) Power MOSFET DF4-19MR20W3M1HF_B11
型号DF4-19MR20W3M1HF_B11 |
品牌 |
分类Power MOSFET |
描述 |
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产品概述 2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC. 特征描述 - Best in Class packages with 12 mm height
- 2 kV CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
优势 - Extended Easy family in 12 mm height with PressFIT
- Pin technology enables platform-based design
- High reliable package and production concept
- Highest power density by lowest RDS
- Reduction of drift caused by dynamic components
- Supports full current operation at 1500 V DC by the sufficient over-voltage margin
- A low FIT rate for cosmic ray induced fails
- Best cost performance ratio with reduced system costs
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