首页 Infineon(英飞凌) Power MOSFET ISC037N12NM6
型号ISC037N12NM6 |
品牌 |
分类Power MOSFET |
描述 |
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产品概述 OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET inSuperSO8packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of Infineon’sOptiMOS™ 6 power MOSFET family. 特征描述 Compared toOptiMOS™3, the technology features: - up to 58% better RDS(on)
- up to 66% better FOMg
- up to 90% better Qrr
- up to 35% better FOMoss
优势 - Very low on-resistance
- Very low reverse recovery charge
- Excellent gate charge x RDS(on)
- High avalanche energy rating
- 175°C junction temperature rating
- Pb-free plating
- RoHS compliant
- Halogen-free
- MSL1 classified
潜在应用 - Power and Gardening Tools
- Adapters and Fast Chargers
- Solar
- Telecom
- Light electric vehicles
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