型号IQE022N06LM5
品牌
分类Power MOSFET
描述
相关操作
产品概述

OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package

IQE022N06LM5 is Infineon’s new best-in-classOptiMOS™ 5power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on)at 25˚C and superior thermal performance. TheOptiMOS™ Source-Downis a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with industrial standard PQFN 3.3x3.3 package, IQE022N06LM5 is targeted for high power density and performanceSMPSproducts commonly found intelecomand data servers.

特征描述

  • Logic level allows lower Qrr and QOSS, and easier gate driver selection
  • Reduced RDS(on)by up to 30% compared to current technology
  • Improved RthJCover current PQFN package technology
  • New, optimized layout possibilities

优势

  • Enabling highest power density and performance
  • Superior thermal performance
  • Optimized layout possibilities for efficient use of real-estate
  • Reduced PCB losses

潜在应用

•Telecom– DC-DC converter
•Server– DC-DC converter