型号DF8MR12W1M1HF_B67
品牌
分类Power MOSFET
描述
相关操作
产品概述

Booster 1200 V CoolSiC™ MOSFET Module

EasyPACK™ 1B 1200 V, 16 mΩ and2 MPPTs booster module withCoolSiC™ MOSFETenhanced generation 1 andPressFITContact Technology.

特征描述

  • Best-in-class packages with 12 mm height
  • Combination of leading edge WBG material and Easy module packages
  • Very low module stray inductance
  • Wide RBSOA
  • 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjopunder overload condition up to 175°C
  • PressFIT pins
  • Integrated NTC temperature sensor

优势

  • Outstanding module efficiency which enables system cost advantages
  • System efficiency improvement for reduced cooling requirements
  • Enabling higher frequency to Increase power density
  • Best cost performance ratio which leads to reduced system costs