首页 Infineon(英飞凌) Power MOSFET DF17MR12W1M1HF_B68
型号DF17MR12W1M1HF_B68 |
品牌 |
分类Power MOSFET |
描述 |
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产品概述 EasyPACK™ 1B CoolSiC™ MOSFET1200 V, 17 mΩ booster single MPPT module with enhanced generation 1, NTC andPressFITContact Technology. 特征描述 - Best-in-class packages with 12 mm height
- Combination of leading edge WBG material and easy module packages
- Very low module stray inductance
- Wide RBSOA
- 1200 V CoolSiC™ MOSFET with enhanced generation 1 trench technology
- Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
- Extended maximum gate-source voltages of +23 V and -10 V
- Tvjop under overload condition up to 175°C
- PressFIT pins
- Integrated NTC temperature sensor
优势 - Outstanding module efficiency which enables system cost advantages
- System efficiency improvement for reduced cooling requirements
- Enabling higher frequency to Increase power density
- Best cost performance ratio which leads to reduced system costs
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