型号TLC2201M
品牌
分类精密运算放大器 (Vos<1mV)
描述低噪声精密高级 LinCMOS™ 单路运算放大器
相关操作
产品概述

参数

Number of channels 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.6
Vos (offset voltage at 25°C) (max) (mV) 0.5
GBW (typ) (MHz) 1.8
Slew rate (typ) (V/µs) 2.5
Rail-to-rail In to V-, Out
Offset drift (typ) (µV/°C) 0.5
Iq per channel (typ) (mA) 1
Vn at 1 kHz (typ) (nV√Hz) 8
CMRR (typ) (dB) 110
Rating Military
Operating temperature range (°C) -55 to 125
Input bias current (max) (pA) 60
Iout (typ) (A) 0.0045
Architecture CMOS
Input common mode headroom (to negative supply) (typ) (V) 0
Input common mode headroom (to positive supply) (typ) (V) -2.3
Output swing headroom (to negative supply) (typ) (V) 0.05
Output swing headroom (to positive supply) (typ) (V) -0.2

封装 | 引脚 | 尺寸

CDIP (JG) 8 64.032 mm² 9.6 x 6.67
LCCC (FK) 20 79.0321 mm² 8.89 x 8.89

特性

  • B Grade Is 100% Tested for Noise
    • 30 nV/Hz Max at f = 10 Hz
    • 12 nV/Hz Max at f = 1 kHz
  • Low Input Offset Voltage . . . 500 µV Max
  • Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
  • Rail-to-Rail Output Swing
  • Low Input Bias Current
    • 1 pA Typ at TA = 25°C
  • Common-Mode Input Voltage Range Includes the Negative Rail
  • Fully Specified For Both Single-Supply and Split-Supply Operation

Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.

说明

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.

The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.