型号TLE2161BM
品牌
分类通用运算放大器
描述军用级、单路、36V、6.4MHz、低失调电压 (0.3mV) 运算放大器
相关操作
产品概述

参数

Number of channels 1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 7
Rail-to-rail In to V+
GBW (typ) (MHz) 6.4
Slew rate (typ) (V/µs) 10
Vos (offset voltage at 25°C) (max) (mV) 0.5
Iq per channel (typ) (mA) 0.29
Vn at 1 kHz (typ) (nV√Hz) 40
Rating Military
Operating temperature range (°C) -55 to 125
Offset drift (typ) (V/°C) 0.000006
Features Decompensated
Input bias current (max) (pA) 60
CMRR (typ) (dB) 90
Iout (typ) (A) 0.05
Architecture FET
Input common mode headroom (to negative supply) (typ) (V) 3
Input common mode headroom (to positive supply) (typ) (V) 1
Output swing headroom (to negative supply) (typ) (V) 0.3
Output swing headroom (to positive supply) (typ) (V) -0.3

封装 | 引脚 | 尺寸

CDIP (JG) 8 64.032 mm² 9.6 x 6.67

特性

  • Excellent Output Drive Capability
    VO = ± 2.5 V Min at RL = 100 ,
    VCC± = ± 5 V
    VO = ± 12.5 V Min at RL = 600 ,
    VCC± = ± 15 V
  • Low Supply Current...280 uA Typ
  • Decompensated for High Slew Rate and
    Gain-Bandwidth Product
    AVD = 0.5 Min
    Slew Rate = 10 V/us Typ
    Gain-Bandwidth Product = 6.5 MHz Typ
  • Wide Operating Supply Voltage Range
    VCC ± = ± 3.5 V to ± 18 V
  • High Open-Loop Gain...280 V/mV Typ
  • Low Offset Voltage...500 uV Max
  • Low Offset Voltage Drift With Time
    0.04 uV/Month Typ
  • Low Input Bias Current...5 pA Typ

TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
u POWER OPERATIONAL AMPLIFIERS



SLOS049D - NOVEMBER 1989 - REVISED MAY 1996

说明

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.